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Design and Development of Motorised Adjustable Vertical Platform For Satellite Assembly, Integration And Test Facility

Tajuk Penyelidikan : Design and Development of Motorised Adjustable Vertical Platform For Satellite Assembly, Integration And Test Facility

Tempoh : 2015 - 2017

Dana : Peruntukan Dana Khas  Agensi

Ringkasan Projek Penyelidikan  :

Pembangunan  projek Motorised Adjustable Vertical Platform For Satellite Assembly, Integration And Test Facility (MAVeP) dilaksanakan bagi menyelesaikan masalah seperti di bawah:

  • Artikel pengujian yang besar dan berat
  • Kakitangan yang terhad
  • kesukaran pengendalian peralatan di ruang yang terhad
  • Kedataran lantai
  • Keselamatan personel dan artikel pengujian
  • Peralatan Thermal Vacuum Chamber berada pada aras tinggi

Oleh itu, pembangunan MAVeP telah di cadangkan bagi memastikan kelancaran operasi di Fasiliti AIT tanpa menjejaskan keselamatan satelit dan personel. Platform ini juga membantu mengurangkan risiko semasa pengendalian artikel pengujian kerana platform ini menyediakan akses terus kepada satelit.

 

Tajuk Penyelidikan : MODELLING OF INDUCED NUCLEAR INTERACTION EFFECT ON STATIC RANDOM ACCESS MEMORY (SRAM) IN NEAR EQUATORIAL ORBIT

Tempoh : 2014 - 2016

Dana : FRGS

Ringkasan Projek Penyelidikan  : 

This research presents an analysis of the radiation environment for satellite in Near Equatorial Orbit (NEqO) using SPENVIS (Space ENVironment Information System).

Table 1: Orbital Parameters

Parameter

Value

Apogee

706.39 km

Perigee

664.65 km

Inclination

8.99°

Right. Ascension of  Ascending Node

350.85°

Argument of Perigee

22.93°

True Anomaly

337.07°

Eccentricity

0.00

 

Radiation models used are AP-8 Min model is used for trapped protons simulation, AE-8 Min model used for trapped electrons, CRÈME 96  for solar protons environment and ISO 15390 model for GCR ions flux.

Figure 1: Modelling and simulation process

 

Figure 2 : Direct ionization SEUs rates through 3 years mission (a) Unshielded Q node (b) Shielded Q node

 

Figure 3 : Virtually fabricated NR1 MOSFET, a physically-based device using Atlas

 

Figure 4 : Drain Current when Beam strike at different positions of the SRAM

The results show that, midpoint of drain is the most sensitive node for any radiation strike. Besides that, for these particular structures, intensity threshold is increasing with the increase of transistor number in the SRAM. These findings are important to design better radiation hardened electronics for space mission.

 

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